BSDH10G65E2
Bourns Inc.
Product No:
BSDH10G65E2
Manufacturer:
Package:
TO-220-2
Batch:
-
Datasheet:
Description:
DIODE SIC 650V 10A TO220-2
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Bourns Inc. |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 323pF @ 1V, 1MHz |
| Supplier Device Package | TO-220-2 |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
2000+Daily average RFQ Volume
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