IRFSL59N10D
Infineon Technologies
Product No:
IRFSL59N10D
Manufacturer:
Package:
TO-262
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 59A TO262
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Supplier Device Package | TO-262 |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
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