RFD16N02L

Harris Corporation

Product No:

RFD16N02L

Manufacturer:

Harris Corporation

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

16A, 20V, 0.022 OHM, N-CHANNEL L

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±10V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 22mOhm @ 16A, 5V
Power Dissipation (Max) 90W (Tc)
Supplier Device Package I-PAK
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)