Harris Corporation
Product No:
RFP2N18
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
N-CHANNEL, MOSFET
Quantity:
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Mfr | Harris Corporation |
Series | - |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 2mA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1A, 10V |
Power Dissipation (Max) | 25W (Tc) |
Supplier Device Package | TO-220 |
Drain to Source Voltage (Vdss) | 180 V |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |