SI4966DY-T1-GE3
Vishay Siliconix
Product No:
SI4966DY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET 2N-CH 20V 8SOIC
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Base Product Number | SI4966 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 4.5V |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Current - Continuous Drain (Id) @ 25°C | - |
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