TPH1R712MD,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH1R712MD,L1Q

Package:

8-SOP Advance (5x5)

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 20V 60A 8SOP

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 1.2V @ 1mA
Base Product Number TPH1R712
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max) 78W (Tc)
Supplier Device Package 8-SOP Advance (5x5)
Gate Charge (Qg) (Max) @ Vgs 182 nC @ 5 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)