VS-3C10ET07T-M3
Vishay General Semiconductor - Diodes Division
Product No:
VS-3C10ET07T-M3
Manufacturer:
Package:
TO-220AC
Batch:
-
Datasheet:
Description:
650 V POWER SIC GEN 3 MERGED PIN
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Base Product Number | VS-3C10 |
| Capacitance @ Vr, F | 445pF @ 1V, 1MHz |
| Supplier Device Package | TO-220AC |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
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