WeEn Semiconductors
Product No:
WNSC12650T6J
Manufacturer:
Package:
5-DFN (8x8)
Batch:
-
Description:
DIODE SIL CARBIDE 650V 12A 5DFN
Quantity:
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Mfr | WeEn Semiconductors |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tape & Reel (TR) |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Surface Mount |
Package / Case | 4-VSFN Exposed Pad |
Product Status | Obsolete |
Base Product Number | WNSC1 |
Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
Supplier Device Package | 5-DFN (8x8) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 12A |
Operating Temperature - Junction | 175°C |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 12 A |